Pamięć HyperX HyperX, DDR3, 8 (2x4) GB, 1600MHz, CL10 (HX316C10FBK2/8)

Na sprzedaż pamięć HyperX HyperX, DDR3, 8 GB (2 x 4GB) ,1600MHz, CL10 (HX316C10FBK2/8). W 100% sprawna, z zewnątrz wygląda jak nowa. Poniżej pełna specyfikacja producenta w języku angielskim. DESCRIPTION HyperX HX316C10FBK2/8 is a kit of two 512M x 64-bit (4GB) DDR3-1600 CL10 SDRAM (Synchronous DRAM) 1Rx8 memory modules, based on eight 512M x 8-bit DDR3 FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows: PnP JEDEC TIMING PARAMETERS: • DDR3-1600 CL 101 - pokaż numer telefonu - .5V • DDR3-1333 CL9-9-9 1.5V • DDR3-1066 CL7-7-7 1.5V SPECIFICATIONS CL(IDD) 10 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 37.5ns (min.) Maximum Operating Power TBD W* (per module) UL Rating 94 V - 0 Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C *Power will vary depending on the SDRAM used. FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • Height 1.291” (32.80mm) w/heatsink, single sided componen